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化合物半導(dǎo)體
鈮酸鋰(LN)
鈮酸鋰是鈮、鋰、氧的化合物，是一種自發(fā)極化大（室溫時 0.70 C/m2）的負性晶體，是目前發(fā)現(xiàn)的居里溫度最高（1210 ℃）的鐵電體。
（1） 壓電應(yīng)用Piezoelectric application
（2） 光學應(yīng)用Optical applications
（3）介電超晶格Dielectric superlattice field
（4）聲學應(yīng)用Acoustic application
（5）光通信應(yīng)用Optical communication application
（6）光子集成芯片Photonic integrated chip
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商品詳情
Optical Grade LiNbO3 Wafer
Parameter Specification
Material Optical Grade LiNbO3 Wafers (White or Black)
Diameter 2inch/3inch/4inch
Diameter Tolerance ±0.03mm
Curie Temp 1142±0.2℃
Cutting Angle X/Y/Z etc.
Tol(±) <0.20 mm   ±0.005mm
Thickness 0.18 ~ 0.5mm or more
Primary Flat 16mm/22mm /32mm
TTV <3µm
BOW -30
WARP <40µm
Orientation Flat All available
Surface Type Single Side Polished(SSP) /Double Sides   Polished(DSP)
Polished side Ra <0.5nm
S/D 20/10
Edge Criteria R=0.2mm C-type or Bullnose
Quality Free of crack (bubbles and inclusions)
Optical doped Mg/Fe/Zn/MgO etc. for optical grade  
Wafer Surface Criteria Refractive index     No=2.2878/Ne=2.2033 @632nm wavelength
Contamination      None
Particles @>0.3 µm  ≤30
Scratch , Chipping   None
Defect              No edge cracks, scratches, saw marks, stains
Packing 25pcs per box

SAW Grade Lithium Niobate Wafers
Parameter Specification
Material LiNbO3 wafers (White or Black)
Diameter 3inch/4inch/inch LN wafer & 8inch under R/D
Diameter Tolerance ±0.03mm
Curie Temp 1142±2.0℃
Cutting Angle X/Y/Z/Y36/Y41/Y64/Y128/etc.
Tol(±) <0.20 mm 
Thickness 0.18 ~ 0.5mm or more
Primary Flat 22mm /32mm /42.5mm /57.5mm
LTV (5mmx5mm)  <1µm
TTV <3µm
BOW -30
WARP <40µm
PLTV(<0.5um) ≥95%(5mm*5mm)
Orientation Flat All available
Surface Type Single Side Polished(SSP) /Double Sides Polished(DSP)
Polished side Ra <0.5nm
Back Side Criteria General is 0.2-0.5µm or as customized
Edge Criteria R=0.2mm or Bullnose
Wafer Surface Criteria Transmissivity       general:5.9x10-11-10 at 25℃
Contamination       None
Particles @>0.3 µm  ≤30
Scratch , Chipping   None
Defect              No edge cracks, scratches, saw marks, stains
Packing 25pcs per box

Optical grade LiNbO3 wafers SLN CLN

Parameter Specification
Material Optical Grade LiNbO3 Wafers (White or Black)
Diameter 2inch/3inch/4inch
Diameter Tolerance ±0.03mm
Curie Temp 1142±0.7℃
Cutting Angle X/Y/Z etc.
Tol(±) <0.20 mm   ±0.005mm
Thickness 0.18 ~ 0.5mm or more
Primary Flat 16mm/22mm /32mm
TTV <3µm
BOW -30
WARP <40µm
Orientation Flat All available
Surface Type Single Side Polished(SSP) /Double Sides   Polished(DSP)
Polished side Ra <0.5nm
S/D 20/10
Edge Criteria R=0.2mm C-type or Bullnose
Quality Free of crack (bubbles and inclusions)
Optical doped Mg/Fe/Zn/MgO etc. for optical grade   LN< wafers per requested
Wafer Surface Criteria Refractive index     No=2.2878/Ne=2.2033 @632nm wavelength/prism   coupler method.
Contamination      None
Particles @>0.3 µm  ≤30
Scratch , Chipping   None
Defect              No edge cracks, scratches, saw marks, stains
Packing 25pcs per box

Sub 1: PlutoChip Co., Ltd    -Discrete Devices and Integrated Circuits-    www.plutochip.com
Sub 2: PlutoSilica Co., Ltd   -Silicon Wafer and Glass Wafer Manufactory-
 備案號：粵ICP備19154843號