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化合物半導(dǎo)體
鉭酸鋰(LT)
鉭酸鋰（LiTaO3）晶體是一種優(yōu)良的多功能材料，具有很高的應(yīng)用價(jià)值。LiTaO3晶體以它的化學(xué)性能穩(wěn)定高（不溶與水），居里點(diǎn)高于600℃，不易出現(xiàn)退極化現(xiàn)象，介電損耗低，探測(cè)率優(yōu)值高的優(yōu)良特性，成為熱釋電紅外探測(cè)器應(yīng)用材料的最佳選擇。經(jīng)過(guò)拋光的LT晶片廣泛用于諧振器、濾波器、換能器等電子通訊器件的制造，尤其以它良好的機(jī)電耦合、溫度系數(shù)等綜合性能而被用于制造高頻聲表面波器件，并應(yīng)用在手機(jī)、對(duì)講機(jī)、衛(wèi)星通訊、航空航天等許多高端通訊領(lǐng)域。
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商品詳情
Fe doped LT Wafers
 
Parameter Specification
Material LiTaO3 wafers（White or Black &Fe doped）
Diameter 3inch/4inch/6inch
Diameter Tolerance ±0.03mm
Curie Temp 603±2℃
Cutting Angle X/Y/Z/X112Y/Y36/Y42/Y48/etc
Tol(±) <0.20 mm 
Thickness 0.18 ~ 0.5mm or more
Primary Flat 22mm /32mm /42.5mm /57.5mm
LTV (5mmx5mm) <1µm
TTV <3µm
BOW -30
WARP <40µm
PLTV(<0.5um) ≥95%(5mm*5mm)
Orientation Flat All available
Surface Type Single Side Polished(SSP) /Double Sides   Polished(DSP)
Polished side Ra <0.5nm
Back Side Criteria General is 0.2-0.5µm or as customized
Edge Criteria R=0.2mm or Bullnose
Fe doped Fe doped for saw grade LN< wafers
Wafer Surface Criteria Transmissivity       general:5.9x10-11-10 at 25℃
Contamination       None
Particles @>0.3 µm  ≤30
Scratch , Chipping   None
Defect              No edge cracks, scratches, saw marks, stains
Packing 25pcs per box

Optical Grade Lithium Tantalate Wafers

Parameter Specification
Material LiTaO3 wafers（White or Black）
Diameter 2inch/3inch/4inch
Diameter Tolerance ±0.03mm
Curie Temp 603±2℃
Cutting Angle X/Y/Z etc.
Tol(±) <0.20 mm 
Thickness 0.18 ~ 0.5mm or more
Primary Flat 16mm/22mm /32mm
TTV <3µm
BOW -30
WARP <40µm
Surface Type Single Side Polished(SSP) /Double Sides   Polished(DSP)
Polished side Ra <0.5nm
Back Side Criteria General is 0.2-0.5µm or as customized
Edge Criteria R=0.2mm or Bullnose
Optical doped Zn/MgO etc.
Wafer Surface Criteria Contamination       None
Particles @>0.3 µm  ≤30
Scratch , Chipping   None
Defect              No edge cracks, scratches, saw marks, stains
Packing 25pcs per box

SAW Grade Lithium Tantalate Wafers

Parameter Specification
Material LiTaO3 wafers
Diameter 3inch/4inch/6inch
Diameter Tolerance ±0.03mm
Curie Temp 603±2℃
Cutting Angle X/Y/Z/X112Y/Y36/Y42/Y48/etc.
Tol(±) <0.20 mm 
Thickness 0.18 ~ 0.5mm or more
Primary Flat 22mm /32mm /42.5mm /57.5mm
LTV (5mmx5mm) <1µm
TTV <3µm
BOW -30
WARP <40µm
PLTV(<0.5um) ≥95%(5mm*5mm)
Orientation Flat All available
Surface Type Single Side Polished(SSP) /Double Sides Polished(DSP)
Polished side Ra <0.5nm
Back Side Criteria General is 0.2-0.5µm or as customized
Edge Criteria R=0.2mm or Bullnose
Wafer Surface Criteria Transmissivity       general:5.9x10-11-10 at 25℃
Contamination       None
Particles @>0.3 µm  ≤30
Scratch , Chipping   None
Defect              No edge cracks, scratches, saw marks, stains
Packing 25pcs per box

Sub 1: PlutoChip Co., Ltd    -Discrete Devices and Integrated Circuits-    www.plutochip.com
Sub 2: PlutoSilica Co., Ltd   -Silicon Wafer and Glass Wafer Manufactory-
 備案號(hào)：粵ICP備19154843號(hào)