| 等級 Grade | Z級 Zero MPD |
工業(yè)級 Production |
研究級 Research Grade |
試片級 Dummy Grade |
|
| 直徑 Diameter | 50.8 ±0.38 mm, 76.2 ±0.38 mm, 100±0.5 mm, 150±0.25mm | ||||
| 厚度 Thickness | 4H-N | 350 μm±25μm | |||
| 4H-SI | 500 μm±25μm | ||||
| 晶片方向 Wafer Orientation | Off axis : 4.0° toward 1120 !±0.5° for 4H-N On axis : <0001>±0.5° for 4H-SI | ||||
| 微管密度 Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤50 cm-2 | |
| 電阻率 Resistivity | 4H-N | 0.015~0.028 Ω·cm | |||
| 6H-N | 0.02~0.1 Ω·cm | ||||
| 4/6H-SI | >1E5 Ω·cm | (90%) >1E5 Ω·cm | |||
| 主定位邊方向 Primary Flat | {10-10}±5.0° | ||||
| 主定位邊長度 Primary Flat Length | 15.9 mm±1.7 mm, 22.2 mm±3.2 mm, 32.5 mm±2.0 mm, 47.5 mm±2.5 mm | ||||
| 次定位邊長度 Secondary Flat Length | 8.0 mm±1.7 mm, 11.2 mm±1.5 mm, 18.0mm±2.0 mm, -----, | ||||
| 次定位邊方向 Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | ||||
| 邊緣 Edge exclusion | 3 mm | ||||
| 總厚度變化/彎曲度/翹曲度 TTV/Bow /Warp | ≤15μm /≤25μm /≤40μm | ||||
| 表面粗糙度 Roughness | Polish Ra≤1 nm | ||||
| CMP Ra≤0.5 nm | |||||
| 裂紋(強光燈觀測) Cracks by high intensity light |
None | None | 1 allowed, ≤1 mm | ||
| 六方空洞(強光燈觀測) Hex Plates by high intensity light |
Cumulative area≤1 % | Cumulative area≤1 % | Cumulative area≤3 % | ||
| 多型(強光燈觀測) Polytype Areas by high intensity light |
None | Cumulative area≤2 % | Cumulative area≤5% | ||
| 劃痕(強光燈觀測) Scratches by high intensity light |
3 scratches to 1× wafer diameter cumulative length |
5 scratches to 1× wafer diameter cumulative length |
8 scratches to 1× wafer diameter cumulative length |
||
| 崩邊 Edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | ||
| 表面污染物(強光燈觀測) Contamination by high intensity light |
None | ||||
