| GaN/ Al?O? Substrates (4") 4英寸氮化鎵復(fù)合襯底 | |||
| Item 產(chǎn)品型號(hào) | Un-doped | N-type | High-doped N-type |
| Size 尺寸 (mm) | Φ100.0±0.5 (4") | ||
| Substrate Structure襯底結(jié)構(gòu) | GaN on Sapphire(0001) | ||
| SurfaceFinished 表面處理 | (Standard: SSP Option: DSP) | ||
| Thickness 厚度(μm) | 4.5±0.5; 20±2;Customized | ||
| Conduction Type 導(dǎo)電類(lèi)型 | Un-doped | N-type | High-doped N-type |
| Resistivity 電阻率 (Ω·cm）(300K) | ≤0.5 | ≤0.05 | ≤0.01 |
| GaN Thickness Uniformity GaN厚度不均勻性 |
≤±10% (4") | ||
| Dislocation Density (cm-2) 位錯(cuò)密度 |
≤5×108 | ||
| 有效面積 Useable Surface Area | ＞90% | ||
| Package 包裝 | Packaged in a class 100 clean room environment. | ||
